DEGRADATION IN SHORT WAVELENGTH (ALGA)AS LIGHT-EMITTING-DIODES

被引：6

作者：

LADANY, I

KRESSEL, H

机构：

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 13期

关键词：

D O I：

10.1049/el:19780275

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：407 / 409

页数：3

共 9 条

[1] THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS [J].

GOODWIN, AR ;

PETERS, JR ;

PION, M ;

THOMPSON, GHB ;

WHITEAWAY, JEA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :3126-3131

[2]

GOODWIN AR, 1977, IEEE J QUANTUM ELECT, V13, P696, DOI 10.1109/JQE.1977.1069424

[3] DISLOCATION PINNING IN GAAS BY DELIBERATE INTRODUCTION OF IMPURITIES [J].

KIRKBY, PA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :562-568

[4]

KRESSEL H, 1975, RCA REV, V36, P230

[5] AL2O3 HALF-WAVE FILMS FOR LONG-LIFE CW LASERS [J].

LADANY, I ;

ETTENBERG, M ;

LOCKWOOD, HF ;

KRESSEL, H .

APPLIED PHYSICS LETTERS, 1977, 30 (02) :87-88

[6]

LADANY I, UNPUBLISHED

[7]

LADANY I, 1976, DEC IEEE INT EL DEV

[8] CALCULATED STRESSES IN MULTILAYERED HETEROEPITAXIAL STRUCTURES [J].

OLSEN, GH ;

ETTENBERG, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (06) :2543-2547

[9] PROPERTIES OF GE-DOPED GAAS AND ALXGA1-XAS,SN-DOPED ALXGA1-XAS AND SI-TE-DOPED GAAS [J].

SHIH, KK ;

PETTIT, GD .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (02) :391-408

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