ION-IMPLANTED SELF-ALIGNED MO GATE MOSFET

被引：0

作者：

SAITO, K

机构：

来源：

ELECTRONICS & COMMUNICATIONS IN JAPAN | 1977年 / 60卷 / 09期

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中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：85 / 92

页数：8

共 23 条

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