NEGATIVE RESISTANCE AND GALVANOMAGNETIC EFFECTS OF HOT ELECTRONS IN INHOMOGENEOUS BULK SEMICONDUCTORS

被引：9

作者：

FERRY, DK

HEINRICH, H

机构：

[1] Lehrkanzel für Angewandte Physik, II. Physikalisches Institut, University of Vienna

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 05期

关键词：

D O I：

10.1016/0038-1101(68)90095-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to study the effect of inhomogeneities on the galvanomagnetic properties of bulk semiconductors, conduction in layered semiconductors has been studied. Layered structures are fabricated from 5 Ω-cm n-type germanium by sandblasting a disturbed layer on one surface. This structure gives samples that have a mobility inhomogeneity between the two layers. With applied magnetic and strong electric fields oriented in the plane of the layers and normal to each other, negative differential resistance and negative magnetoresistance can be observed. © 1968.

引用

页码：561 / &

共 10 条

[1]

FRANK H, 1964, HALBLEITERBAUELEMENT, V1, P269

[2]

GUNN JB, 1956, J ELECTRONICS, V2, P87

[3] EFFECT OF RANDOM INHOMOGENEITIES ON ELECTRICAL AND GALVANOMAGNETIC MEASUREMENTS [J].