DIRECT MEASUREMENT OF EVAPORATION DURING RAPID THERMAL-PROCESSING OF CAPPED GAAS

被引：31

作者：

HAYNES, TE ^{[1
]}

CHU, WK ^{[1
]}

PICRAUX, ST ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 16期

关键词：

D O I：

10.1063/1.97973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1071 / 1073

页数：3

共 6 条

[1] DIFFUSIVITY SUMMARY OF B, GA, P, AS, AND SB IN SIO2 [J].

GHEZZO, M ;

BROWN, DM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :146-148

[2] DIFFUSION OF GALLIUM THROUGH SILICON DIOXIDE LAYER [J].

GROVE, AS ;

LEISTIKO, O ;

SAH, CT .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (09) :985-&

[3] INITIAL DECOMPOSITION OF GAAS DURING RAPID THERMAL ANNEALING [J].

HAYNES, TE ;

CHU, WK ;

ASELAGE, TL ;

PICRAUX, ST .

APPLIED PHYSICS LETTERS, 1986, 49 (11) :666-668

[4] ION-IMPLANTATION FOR HIGH-SPEED III-V ICS [J].

NISHI, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :395-401

[5] VAPOR-PRESSURES OF ARSENIC OVER INAS(C) AND GAAS (C) - ENTHALPIES OF FORMATION OF INAS(C) AND GAAS(C) [J].

PUPP, C ;

MURRAY, JJ ;

POTTIE, RF .

JOURNAL OF CHEMICAL THERMODYNAMICS, 1974, 6 (02) :123-134

[6] SI FILM AS AN ANNEALING CAP FOR SI-IMPLANTED GAAS [J].

SHIM, TE ;

ITOH, T ;

YAMAMOTO, Y ;

SUZUKI, S .

APPLIED PHYSICS LETTERS, 1986, 48 (10) :641-643

← 1 →