Spectroellipsometric characterisation of thin epitaxial Si(1-x)Ge(x)layers

被引：0

作者：

Libezny, M ^{[1
]}

Caymax, M ^{[1
]}

Brablec, A ^{[1
]}

Kubena, J ^{[1
]}

Holy, V ^{[1
]}

Poortmans, J ^{[1
]}

Nijs, J ^{[1
]}

Vanhellemont, J ^{[1
]}

机构：

[1] MASARYK UNIV,FAC SCI,CR-61137 BRNO,CZECH REPUBLIC

来源：

MATERIALS SCIENCE AND TECHNOLOGY | 1995年 / 11卷 / 10期

关键词：

D O I：

10.1179/mst.1995.11.10.1065

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spectroscopic ellipsometry is assessed as a tool for rapid and non-destructive determination of thicknesses and/for Ge concentrations of Si1-xGex epitaxial layers. Ail algorithm for the extraction of optical constants from ellipsometric measurements carried out on strained uncapped Si1-xGex layers is developed. The smoothness of the extracted spectra of the Si0.92Ge0.08 optical constants indicates very high accuracy even in the region of the weak absorption. Spectroscopic ellipsometry measurements of Si capped Si1-xGex layers are interpreted using the established reference data and correlated with results from other techniques. The accuracy of this interpretation for the spectroellipsometriczetric determination of Ge concentration and Si1-xGex layer thickness is numerically predicted. It is suggested that spectroscopic ellipsometry can also be applied to capped Si1-xGex layers if more accurate reference data in the low absorption legion become available.

引用

页码：1065 / 1070

页数：6

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