Atomic Layer Deposition of HfO2 Films on Ge

被引：0
|
作者：
Cho, Young Joon [1 ]
Chang, Hyo Sik [1 ]
机构：
[1] Chungnam Natl Univ, Grad Sch Green Energy Technol, Daejeon 305764, South Korea
来源：
APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY | 2014年 / 23卷 / 01期
关键词：
Atomic layer deposition; HfO2; Ge; GeO; Growth; Annealing;
D O I：
10.5757/ASCT.2014.23.1.40
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the growth characteristics and interfacial properties of HfO2 films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of HfO2 grown on a GeO2/Ge substrate through ALD is similar to that grown on an SiO2/Si substrate. However, the incubation period of HfO2 deposition on Ge is shorter than that on Si. The HfO2 grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at 700 degrees C. The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device.
引用
收藏
页码：40 / 43
页数：4
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