EXPERIMENTAL ANALYSIS FOR ANOMALOUS MODE AVALANCHE-DIODE OSCILLATORS USING A NEW CIRCUIT

被引:0
作者
FURUKAWA, S [1 ]
HORIGUCHI, S [1 ]
机构
[1] TOKYO INST TECHNOL, FAC ENGN, TOKYO 152, JAPAN
来源
ELECTRONICS & COMMUNICATIONS IN JAPAN | 1972年 / 55卷 / 06期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:56 / 64
页数:9
相关论文
共 18 条
[1]  
CHAFFIN RG, 1970, IEEE T, VMT18, P933
[2]  
CLORFEINE AS, 1969, RCA REV, V30, P397
[3]   DEVICE PHYSICS OF TRAPATT OSCILLATORS [J].
DELOACH, BC ;
SCHARFETTER, DL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :9-+
[4]   CIRCUITS FOR HIGH-EFFICIENCY AVALANCHE-DIODE OSCILLATORS [J].
EVANS, WJ .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1969, MT17 (12) :1060-+
[5]  
FURUKAWA, 1971, IECE TECHNICAL GROUP, VED71
[6]   LOW-FREQUENCY HIGH-EFFICIENCY OSCILLATIONS IN GERMANIUM IMPATT DIODES [J].
JOHNSTON, RL ;
SCHARFETTER, DL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (11) :905-+
[7]  
KERZER B, 1971 P EUR MICR C
[8]   TUNABLE L-BAND HIGH-POWER AVALANCHE-DIODE OSCILLATOR CIRCUIT [J].
LEVINE, PA ;
LIU, SG .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1969, SC 4 (06) :384-+
[9]  
LIU SG, 1971, PR INST ELECTR ELECT, V59, P1216, DOI 10.1109/PROC.1971.8367
[10]  
LIU SG, 1969, IEEE T MICROW THEORY, VMT17, P1068