SWITCHING AND MEMORY CHARACTERISTICS OF ZNSE-GE HETEROJUNCTIONS

被引:64
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HOVEL, HJ
URGELL, JJ
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10.1063/1.1659895
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O59 [应用物理学];
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页码:5076 / &
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共 25 条
[1]  
BOWERS HC, 1970, IEEE T ELECTRON EDVI, VED17, P971
[2]   DETERMINATION OF ELECTRON TRAPPING PARAMETERS [J].
BUBE, RH ;
DUSSEL, GA ;
HO, CT ;
MILLER, LD .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :21-&
[3]  
Bube RH., 1960, PHOTOCONDUCTIVITY SO
[4]   ELECTRIC FIELD EFFECTS IN TRAPPING PROCESSES [J].
DUSSEL, GA ;
BUBE, RH .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2797-&
[5]  
HAMAKAWA Y, 1970, 2 P C SOL STAT DEV T
[6]   BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES [J].
HIATT, WR ;
HICKMOTT, TW .
APPLIED PHYSICS LETTERS, 1965, 6 (06) :106-&
[7]  
HIATT WR, 1970, SOLID STATE ELECTRON, V13, P1033
[8]   MISFIT DISLOCATIONS IN SEMICONDUCTORS [J].
HOLT, DB .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) :1053-+
[9]   SWITCHING AND MEMORY IN ZNSE-GE HETEROJUNCTIONS [J].
HOVEL, HJ .
APPLIED PHYSICS LETTERS, 1970, 17 (04) :141-&
[10]   EPITAXY OF ZNSE ON GE GAAS AND ZNSE BY AN HCL CLOSE-SPACED TRANSPORT PROCESS [J].
HOVEL, HJ ;
MILNES, AG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) :843-&