ACTIVATION OF BORON-DOPANT ATOMS IN ION-IMPLANTED DIAMONDS

被引：148
作者：
PRINS, JF
机构：
来源：
PHYSICAL REVIEW B | 1988年 / 38卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.38.5576
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：5576 / 5584
页数：9
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共 43 条
[1]  
BAZHENOV VK, 1985, SOV PHYS SEMICOND+, V19, P829
[2]  
BOURGOIN JC, 1975, IND DIAMOND REV S, P24
[3]   CHANNELING ANALYSIS OF HIGH-TEMPERATURE ION-IMPLANTED DIAMOND [J].
BRAUNSTEIN, G ;
KALISH, R .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :691-697
[4]   DAMAGE AND LATTICE LOCATION STUDIES IN HIGH-TEMPERATURE ION-IMPLANTED DIAMOND [J].
BRAUNSTEIN, G ;
KALISH, R .
APPLIED PHYSICS LETTERS, 1981, 38 (06) :416-418
[5]   LATTICE ORIENTATION OF DEFECTS IN ION-IMPLANTED DIAMOND [J].
BRAUNSTEIN, G ;
KALISH, R .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :387-393
[6]   RADIATION-DAMAGE AND ANNEALING IN SB IMPLANTED DIAMOND [J].
BRAUNSTEIN, G ;
TALMI, A ;
KALISH, R ;
BERNSTEIN, T ;
BESERMAN, R .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4) :139-144
[7]   EFFECTIVE P-TYPE DOPING OF DIAMOND BY BORON ION-IMPLANTATION [J].
BRAUNSTEIN, G ;
KALISH, R .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2106-2108
[8]  
BROSIOUS PR, 1974, PHYS STATUS SOLIDI A, V21, P677, DOI 10.1002/pssa.2210210233
[9]   ELECTRON-PARAMAGNETIC RESONANCE IN DIAMOND IMPLANTED AT VARIOUS ENERGIES AND TEMPERATURES [J].
BROSIOUS, PR ;
LEE, YH ;
CORBETT, JW ;
CHENG, LJ .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 25 (02) :541-549
[10]  
Clark C. D., 1971, Radiation Effects, V9, P219, DOI 10.1080/00337577108231052
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