ELECTRON-ENERGY LOSS STUDIES OF DIRECT NON-VERTICAL INTERBAND-TRANSITIONS IN SILICON

被引：9

作者：

CHEN, CH

机构：

[1] CORNELL UNIV, SCH APPL & ENGN PHYS, ITHACA, NY 14853 USA

[2] CORNELL UNIV, CTR HUMAN DEV, ITHACA, NY 14853 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1977年 / 83卷 / 01期

关键词：

D O I：

10.1002/pssb.2220830139

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：347 / 351

页数：5

共 8 条

[1] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J].

CARDONA, M ;

POLLAK, FH .

PHYSICAL REVIEW, 1966, 142 (02) :530-&

[2] CALCULATED VALENCE-BAND DENSITIES OF STATES AND PHOTOEMISSION SPECTRA OF DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, J ;

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (06) :2786-2794

[3] WIEN FILTER FOR USE AS AN ENERGY ANALYZER WITH AN ELECTRON MICROSCOPE [J].

CURTIS, GH ;

SILCOX, J .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1971, 42 (05) :630-+

[4] METHOD FOR PRODUCING LARGE SI FILMS FOR PRESELECTED IMPERFECTION ANALYSIS [J].

LAWRENCE, JE ;

KOEHLER, H .

JOURNAL OF SCIENTIFIC INSTRUMENTS, 1965, 42 (04) :270-&

[5] DIRECT NONVERTICAL INTERBAND AND INTRABAND TRANSITIONS IN AL [J].

PETRI, E ;

OTTO, A .

PHYSICAL REVIEW LETTERS, 1975, 34 (20) :1283-1286

[6] INFLUENCE OF OXIDE LAYERS ON DETERMINATION OF OPTICAL PROPERTIES OF SILICON [J].

PHILIPP, HR .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2835-&

[7] OPTICAL PROPERTIES OF SEMICONDUCTORS [J].

PHILIPP, HR ;

EHRENREICH, H .

PHYSICAL REVIEW, 1963, 129 (04) :1550-&

[8] FREQUENCY-VECTOR-DEPENDENT AND WAVE-VECTOR-DEPENDENT DIELECTRIC FUNCTION FOR SILICON [J].

WALTER, JP ;

COHEN, ML .

PHYSICAL REVIEW B, 1972, 5 (08) :3101-+

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