THEORY OF THE DISPERSION OF ULTRAFAST NONLINEAR REFRACTION IN ZINCBLENDE SEMICONDUCTORS BELOW THE BAND-EDGE

被引：35

作者：

HUTCHINGS, DC ^{[1
]}

WHERRETT, BS ^{[1
]}

机构：

[1] HERIOT WATT UNIV, DEPT PHYS, EDINBURGH EH14 4AS, MIDLOTHIAN, SCOTLAND

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.50.4622

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dispersion of the nonlinear refractive index of direct-gap semiconductors, over the full subband-gap spectral region, is determined within the four-band Kane model. The divergences of individual terms in the nonlinear susceptibility, which have prevented previous full calculations, are avoided by selecting suitable combinations of terms and by a consistent application of the analytic continuation technique. The origins of different forms of divergence are analyzed. Results are presented for InSb, InAs, GaAs, CdTe, ZnTe, and ZnSe; these are compared with previous model calculations based on a Kramers-Kronig transformation of the nonlinear absorptive susceptibilities. The present model gives excellent agreement, with no fitting parameters, to spectral midgap experimental results for the alloy Al0.18Ga0.82As.

引用

页码：4622 / 4630

页数：9

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