AC IMPEDANCE INVESTIGATION OF TA2O5 FILM FOR USE AS A STORAGE CAPACITOR DIELECTRIC

被引:3
|
作者
RESETIC, A
METIKOSHUKOVIC, M
机构
[1] Institute of Electrochemistry Faculty of Technology, University of Zagreb, Zagreb
关键词
D O I
10.1016/0040-6090(92)90740-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The dielectric properties of anodically formed oxide layers of different thicknesses on tantalum in contact with electrolyte were analyzed by measuring the frequency dependence of the impedance from 0.25 to 25 kHz. It was found that the reciprocal capacitance is a linear function of the logarithm of frequency, and the resistance is a linear function of reciprocal frequency for all layer thicknesses in the frequency range from 0.35 to 10 kHz. Deviation from linearity occurs for the capacitance component above 10 kHz and for the resistance component below 0.35 kHz. This is in accordance with theoretical Young's relations which are valid in the range from zero to infinity. It is demonstrated that Young's equations are mutually dependent owing to the validity of the Kramers-Kronig (KK) relations which are in a mathematical sense the integral equations. The right-hand sides of these equations are improper integrals. Evaluation of improper integrals, of which the numerators of the integrands are Young's equations, were solved by applying Cauchy's residue theorem. The results are interpreted in terms of a model which proposes an exponential variation of resistivity through the oxide. The exponential variation of the resistivity may be associated with the existence of the exponential distribution of oxygen vacancies in the anodic oxide layer, which occurred during growth of the oxide layer.
引用
收藏
页码:176 / 182
页数:7
相关论文
共 50 条
  • [1] Influence of capability of Ta2O5 dielectric film on performance of wet tantalum electrolytic capacitor
    School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China
    不详
    Yadian Yu Shengguang, 2006, 4 (475-477+480):
  • [2] DIELECTRIC CHARACTERISTICS A VERY THIN TA2O5 MIS CAPACITOR
    NISHIOKA, Y
    KIMURA, S
    MUKAI, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) : C89 - C89
  • [3] Investigation of Ta2O5 thin film evolution
    Kristóf, J
    De Battisti, A
    Keresztury, G
    Horváth, E
    Szilágyi, T
    LANGMUIR, 2001, 17 (05) : 1637 - 1640
  • [4] Ultrathin Ta2O5 film capacitor with Ru bottom electrode
    Aoyama, T
    Yamazaki, S
    Imai, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (08) : 2961 - 2964
  • [5] Thermal Ta2O5 -: alternative to SiO2 for storage capacitor application
    Atanassova, E
    Spasov, D
    MICROELECTRONICS RELIABILITY, 2002, 42 (08) : 1171 - 1177
  • [6] Investigation of TiO2, Ta2O5 capacitor-varistor ceramics
    Li, C.P.
    Wang, J.F.
    Chen, H.C.
    Su, W.B.
    Zhong, W.L.
    Zhan, P.L.
    Yadian Yu Shengguang/Piezoelectrics and Acoustooptics, 2001, 23 (02):
  • [7] Optical and dielectric properties of β-Ta2O5
    Valencia-Balvin, C.
    Orozco, S.
    Osorio-Guillen, J. M.
    Perez-Walton, S.
    XX CHILEAN PHYSICS SYMPOSIUM, 2018, 1043
  • [8] Hydrogen Gas Sensors Using a Thin Ta2O5 Dielectric Film
    Kim, Seongjeen
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 65 (11) : 1749 - 1753
  • [9] Pentacene Thin-Film Transistors with Ta2O5 as the Gate Dielectric
    Dong, Guifang
    Qiu, Yong
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (01) : 493 - 497
  • [10] Investigation of IrO2/Ta2O5 thin film evolution
    Kristóf, J
    Szilágyi, T
    Horváth, E
    De Battisti, A
    Frost, RL
    Rédey, A
    THERMOCHIMICA ACTA, 2004, 413 (1-2) : 93 - 99