X-RAY STUDY OF SMALL DISLOCATION LOOPS IN THERMALLY OXIDIZED SILICON

被引：15
作者：
KAWADO, S
MARUYAMA, T
机构：
来源：
JOURNAL OF APPLIED CRYSTALLOGRAPHY | 1972年 / 5卷 / JUL1期
关键词：
D O I：
10.1107/S0021889872009513
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
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页码：281 / &
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