PULSED ORGANOMETALLIC BEAM EPITAXY OF COMPLEX OXIDE-FILMS

被引：56

作者：

DURAY, SJ ^{[1
]}

BUCHHOLZ, DB ^{[1
]}

SONG, SN ^{[1
]}

RICHESON, DS ^{[1
]}

KETTERSON, JB ^{[1
]}

MARKS, TJ ^{[1
]}

CHANG, RPH ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 12期

关键词：

D O I：

10.1063/1.105301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10(-4)-10(-2) Torr) and low substrate temperature (600-680-degrees-C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[T(c) (R = 0) = 90.5 K] and J(c) (77 K, 50 K gauss) = 1.1 X 10(5) A/cm2} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures (e.g., junctions).

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页码：1503 / 1505

页数：3

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