ELECTRICAL PROPERTY STUDIES OF OXYGEN IN CZOCHRALSKI-GROWN NEUTRON-TRANSMUTATION-DOPED SILICON

被引：0
|
作者：
CLELAND, JW [1 ]
FUKUOKA, N [1 ]
机构：
[1] OAK RIDGE NATL LAB,OAK RIDGE,TN 37830
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1980年 / 25卷 / 03期
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D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：203 / 203
页数：1
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