ELECTRICAL-PROPERTIES OF THE MOS CAPACITOR STRUCTURE OF N-GAAS USING NATIVE ANODIC OXIDE

被引：0

作者：

ARORA, BM ^{[1
]}

BIDNURKAR, MG ^{[1
]}

NARSALE, AM ^{[1
]}

机构：

[1] UNIV BOMBAY,DEPT PHYS,BOMBAY 400019,INDIA

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 1979年 / 17卷 / 06期

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中图分类号：

O4 [物理学];

学科分类号：

0702 ;

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页码：341 / 347

页数：7

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