ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON

The energy levels produced by platinum in silicon have been measured in p- and n-type material using deep-level transient spectroscopy and constant-capacitance thermal-emission-rate measurements. Within the sensitivity of the apparatus only two levels have been detected having thermal-emission activation energies of EC-ET=0.231 eV and E T-EV=0.321 eV. The majority-carrier capture cross sections of these levels have also been measured, giving σnA =7×10-15 cm2 and σpD=1. 5×10-15 exp(-7.3 ×10-3/kT). Using these values together with thermal-emission data and assumed degeneracy factors of g A=0.5 and gD=2 in the equation of detailed balance, it was concluded that both levels were fixed to the conduction band edge.