BERYLLIUM-ION IMPLANTATION IN INP AND IN1-XGAXASYP1-Y

Anneal temperatures ≥700°C are necessary to obtain maximum electrical activation of implanted Be in InP. At these temperatures, activation ≳50% is generally achievable. Both the implant temperature and implanted-Be concentration affect p-n junction depth and presumably, therefore, the in-diffusion of implanted Be. For room-temperature implants, the maximum Be concentration which showed insignificant in-diffusion was 3×10 18 cm-3. Using a multienergy implant schedule (highest energy 400 keV), which results in a flat as-implanted Be concentration of ≈3×1018 cm-3, sheet hole concentrations as high as 2.2×1014 and 1.5×1014 cm-2 have been obtained in InP and In0.75Ga0.25As 0.52P0.48, respectively.