共 50 条
- [1] RADIATION-DAMAGE TO SILICON BY HIGH-ENERGY PARTICLES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (09): : 1049 - 1050
- [3] THE REDISTRIBUTION OF IMPLANTED ATOMS AND RADIATION-DAMAGE DURING THE IMPLANTATION DOPING OF DIAMOND NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 1366 - 1371
- [5] EPR, XRD AND OPTICAL REFLECTIVITY STUDIES OF RADIATION-DAMAGE IN SILICON AFTER HIGH-ENERGY IMPLANTATION OF NI IONS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 94 (03): : 240 - 244
- [7] PROFILES OF RADIATION-DAMAGE AND IMPLANTED BORON IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (03): : 395 - 396
- [8] RADIATION-DAMAGE INDUCED BY CHANNELING OF HIGH-ENERGY ELECTRONS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 11 (02): : K103 - &
- [9] THE RADIATION-DAMAGE IN HIGH-DOSE ARGON-IMPLANTED SILICON RADIATION EFFECTS LETTERS, 1983, 76 (05): : 157 - 161