OHMIC CONTACTS AND DOPING OF CDTE

Fabrication of ohmic contacts to CdTe is strongly dependent on obtaining sufficient carrier density in the material. Acceptor levels greater than 10**1**7 cm** minus **3 are easily obtained in single-crystal CdTe but are difficult to obtain for polycrystalline material. Consequently, contacts with a specific resistivity of about 0. 2 OMEGA cm**2, which is adequate for efficient solar cells, can be obtained readily with single crystals but not with polycrystalline CdTe. This paper reviews the current art and science of contacting p-CdTe and its relation to doping the material.