DOUBLE INJECTION IN EVAPORATED SILICON FILMS

被引：10

作者：

BRAUNSTEIN, M

BRAUNSTE.AI

ZULEEG, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1967年 / 10卷 / 11期

关键词：

D O I：

10.1063/1.1754826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：313 / +

页数：1

共 10 条

[1] FILAMENTARY INJECTION IN SEMI-INSULATING SILICON [J].

BARNETT, AM ;

MILNES, AG .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4215-&

[2]

BARON R, PRIVATE COMMUNICATIO

[3] DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS [J].

HOLONYAK, N .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12) :2421-&

[4] DOUBLE INJECTION IN INSULATORS [J].

LAMPERT, MA .

PHYSICAL REVIEW, 1962, 125 (01) :126-&

[5] EFFECT OF LIGHT ON POPULATION OF RECOMBINATION CENTERS IN STRUCTURES EXHIBITING DOUBLE INJECTION (77DEGREESK PHOTOCONDUCTIVITY NEGATIVE RESISTANCE SI P-PI-N T/E) [J].

MARSH, OJ ;

BARON, R ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1965, 7 (05) :120-&

[6] OBSERVATION OF NEGATIVE RESISTANCE IN LONG SILICON P-PI-N DIODES ( EFFECT OF GE-FILTERED LIGHT - E/T ) [J].

MAYER, JW ;

BARON, R ;

MARSH, OJ .

APPLIED PHYSICS LETTERS, 1965, 6 (02) :38-&

[7] SPECIFIC NEGATIVE RESISTANCE IN SOLIDS [J].

RIDLEY, BK .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530) :954-&

[8] CURRENT VOLTAGE CHARACTERISTICS AND NEGATIVE RESISTANCE PHENOMENA IN FORWARD DIRECTION SI PIN-DIODES [J].

SHOHNO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (02) :114-&

[9] DOUBLE INJECTION WITH NEGATIVE RESISTANCE IN PLASTICALLY DEFORMED GERMANIUM P-N JUNCTIONS [J].

VANRUYVEN, LJ ;

ADRIAENS, WHT .

PHYSICS LETTERS, 1962, 3 (03) :109-110

[10] POST-BREAKDOWN CONDUCTION IN FORWARD-BIASED P-I-N SILICON DIODES ( FILAMENTARY POST-BREAKDOWN CONDUCTION E [J].

WAGENER, JL ;

MILNES, AG .

APPLIED PHYSICS LETTERS, 1964, 5 (09) :186-&

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