THE NATURE OF INTRINSIC HOLE TRAPS IN THERMAL SILICON DIOXIDE

被引：24
|
作者：
MANCHANDA, L
VASI, J
BHATTACHARYYA, AB
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 07期
关键词：
D O I：
10.1063/1.329352
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：4690 / 4696
页数：7
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