BREAK JUNCTION TUNNELING IN HIGH-TEMPERATURE SUPERCONDUCTORS

被引:0
作者
PETROV, DK [1 ]
REN, ZE [1 ]
WANG, CA [1 ]
WANG, JH [1 ]
NAUGHTON, MJ [1 ]
机构
[1] SUNY BUFFALO,NEW YORK STATE INST SUPERCONDUCT,DEPT CHEM,BUFFALO,NY 14260
关键词
D O I
10.1016/0964-1807(94)90073-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mechanically adjustable junctions were formed by breaking samples of Bi2Sr2CaCu2O8 single crystals at low temperatures. The tunneling barrier is associated with a symmetrical Schottky-type barrier arising naturally at the surface. Current-voltage and dynamic conductance-voltage traces show well defined gap structure at voltages +/- 2 Delta/e and a resonant structure at subgap voltages. From the period of the observed oscillations and the layered model of a high temperature superconductor, the Fermi velocity of the quasiparticles is estimated to be nu(F) = 8 x 10(3) m/s. The behavior of the background conductance depends on the barrier parameters and local morphology in the junction region.
引用
收藏
页码:729 / 734
页数:6
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