MOLECULAR-BEAM EPITAXY GROWTH OF VERTICAL CAVITY OPTICAL-DEVICES WITH INSITU CORRECTIONS

被引：38

作者：

BACHER, K

PEZESHKI, B

LORD, SM

HARRIS, JS

机构：

[1] Solid State Laboratories, Stanford University, Stanford

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 12期

关键词：

D O I：

10.1063/1.107546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a novel approach to the molecular beam epitaxial (MBE) growth of vertical Fabry-Perot cavities with quarter-wave mirrors. At two selected points, the growth is interrupted and the reflectivity spectrum is measured without removing the wafer from the vacuum system. Corrections are then made in the growth of subsequent layers. By making measurements on the incomplete structure, separate corrections can be made to center both the mirror reflectivity and the cavity resonance at the desired wavelength. We present theoretical and experimental data demonstrating the effectiveness of the approach, and estimate the effects on device performance.

引用

页码：1387 / 1389

页数：3

共 11 条

[1]

BONE DJ, COMMUNICATION

[2] RASTERED, UNIFORMLY SEPARATED WAVELENGTHS EMITTED FROM A 2-DIMENSIONAL VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY [J].