FACTORS DETERMINING THE OXYGEN CONTENT OF LIQUID SILICON AT ITS MELTING POINT

被引:39
作者
KAISER, W
BRESLIN, J
机构
关键词
D O I
10.1063/1.1723428
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1292 / 1294
页数:3
相关论文
共 21 条
[1]   CONTRIBUTION TO THE FLOATING ZONE REFINING OF SILICON [J].
BUEHLER, E .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1957, 28 (06) :453-460
[2]  
CHAPMAN, 1939, MATH THEORY NONUNIFO
[3]  
DEBYE PP, 1957, B AM PHYS SOC 2, V2, P66
[4]  
EMEIS R, 1954, Z NATURFORSCH A, V9, P67
[5]  
FULLER, 1954, PHYS REV, V96, P833
[6]  
FULLER, 1955, ACTA MET, V3, P96
[7]   EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J].
FULLER, CS ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1427-1436
[8]  
GREEN, 1957, J ELECTRONICS, V3, P171
[9]   INFRARED ABSORPTION OF OXYGEN IN SILICON [J].
HROSTOWSKI, HJ ;
KAISER, RH .
PHYSICAL REVIEW, 1957, 107 (04) :966-972
[10]   ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].
KAISER, W .
PHYSICAL REVIEW, 1957, 105 (06) :1751-1756