THE INITIAL-STAGES OF GROWTH OF GE ON SI(001) STUDIED BY X-RAY-DIFFRACTION

被引：2
作者：
WILLIAMS, AA
MACDONALD, JE
VANSILFHOUT, RG
VANDERVEEN, JF
JOHNSON, AD
NORRIS, C
机构：
[1] FOM LAB, 1098 SJ AMSTERDAM, NETHERLANDS
[2] UNIV LEICESTER, DEPT PHYS, LEICESTER LE1 7RH, ENGLAND
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1989年 / 1卷
关键词：
D O I：
10.1088/0953-8984/1/SB/073
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：SB273 / SB274
页数：2
相关论文
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[2]   GE-SI LAYERED STRUCTURES - ARTIFICIAL CRYSTALS AND COMPLEX CELL ORDERED SUPERLATTICES [J].
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[3]   INITIAL-STAGE OF HETEROEPITAXY OF GE ON SI(111)-7 X 7 AND (100)-2 X 1 SURFACES STUDIED BY LOW-ENERGY ELECTRON-LOSS SPECTROSCOPY (LEELS) [J].
ISHIMARU, N ;
UEBA, H ;
TATSUYAMA, C .
SURFACE SCIENCE, 1988, 193 (1-2) :193-211
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