ELECTRON-PARAMAGNETIC RESONANCE OF LATTICE DAMAGE IN OXYGEN-IMPLANTED SILICON

被引：89
作者：
BROWER, KL
BEEZHOLD, W
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 08期
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D O I：
10.1063/1.1661743
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：3499 / &
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