RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP

被引：76

作者：

NISHIYAMA, K

ARAI, M

WATANABE, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 10期

关键词：

D O I：

10.1143/JJAP.19.L563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L563 / L566

页数：4

共 14 条

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SMITH, PR ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541

[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[3] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J].

GAT, A ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :142-144

[4]

GAT A, 1979, SOLID STATE TECHNOL, V22, P59

[5] PULSED ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON [J].

INADA, T ;

SUGIYAMA, T ;

OKANO, N ;

ISHIKAWA, Y .

ELECTRONICS LETTERS, 1980, 16 (02) :54-55

[6] PULSED ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SI LAYERS [J].

KENNEDY, EF ;

LAU, SS ;

GOLECKI, I ;

MAYER, JW ;

TSENG, W ;

MINNUCCI, JA ;

KIRKPATRICK, AR .

RADIATION EFFECTS LETTERS, 1979, 43 (01) :31-36

[7]

LAU SS, 1979, APPL PHYS LETT, V35, P15

[8] ANNEALING OF PHOSPHORUS-ION-IMPLANTED SILICON USING A CO2-LASER [J].

MIYAO, M ;

OHYU, K ;

TOKUYAMA, T .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :227-229

[9] TARGET HEATING DURING ION-IMPLANTATION [J].

PARRY, PD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (02) :622-629

[10]

RATNAKUMAR KN, 1979, APPL PHYS LETT, V35, P463, DOI 10.1063/1.91170

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