GENERAL SPECIFICATIONS FOR SILICON SEMICONDUCTORS FOR USE IN RADIATION-DOSIMETRY

[1] [Anonymous], 1983, MED PHYS, V10, P741

[2] BERGER MJ, 1982, NBSIR8225550 REP

[3] BERTILSSON G, 1975, THESIS U LUND

[4] THE DEPENDENCE OF MASS-ENERGY ABSORPTION-COEFFICIENT RATIOS ON BEAM SIZE AND DEPTH IN A PHANTOM [J]. MEDICAL PHYSICS, 1986, 13 (04) : 496 - 502

[5] Dixon R L, 1979, Med Phys, V6, P436, DOI 10.1118/1.594533

[6] SILICON DIODE DOSIMETRY [J]. INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES, 1982, 33 (11): : 1171 - 1176

[7] DIXON RL, 1986, MED PHYS, V13, P608

[8] Gager L D, 1977, Med Phys, V4, P494, DOI 10.1118/1.594348

[9] RADIATION-DAMAGE INDUCED DOSE-RATE NON-LINEARITY IN AN N-TYPE SILICON DETECTOR [J]. ACTA RADIOLOGICA ONCOLOGY, 1984, 23 (06): : 465 - 469

[10] EVALUATION OF TEMPERATURE EFFECTS IN P-TYPE SILICON DETECTORS [J]. PHYSICS IN MEDICINE AND BIOLOGY, 1986, 31 (05) : 527 - 534

[1] [Anonymous], 1983, MED PHYS, V10, P741

[2] BERGER MJ, 1982, NBSIR8225550 REP

[3] BERTILSSON G, 1975, THESIS U LUND

[4] THE DEPENDENCE OF MASS-ENERGY ABSORPTION-COEFFICIENT RATIOS ON BEAM SIZE AND DEPTH IN A PHANTOM [J]. MEDICAL PHYSICS, 1986, 13 (04) : 496 - 502

[5] Dixon R L, 1979, Med Phys, V6, P436, DOI 10.1118/1.594533

[6] SILICON DIODE DOSIMETRY [J]. INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES, 1982, 33 (11): : 1171 - 1176

[7] DIXON RL, 1986, MED PHYS, V13, P608

[8] Gager L D, 1977, Med Phys, V4, P494, DOI 10.1118/1.594348

[9] RADIATION-DAMAGE INDUCED DOSE-RATE NON-LINEARITY IN AN N-TYPE SILICON DETECTOR [J]. ACTA RADIOLOGICA ONCOLOGY, 1984, 23 (06): : 465 - 469

[10] EVALUATION OF TEMPERATURE EFFECTS IN P-TYPE SILICON DETECTORS [J]. PHYSICS IN MEDICINE AND BIOLOGY, 1986, 31 (05) : 527 - 534