RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON

被引:727
作者
IRVIN, JC
机构
来源
BELL SYSTEM TECHNICAL JOURNAL | 1962年 / 41卷 / 02期
关键词
D O I
10.1002/j.1538-7305.1962.tb02415.x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:387 / +
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共 17 条
[1]   EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J].
BACKENSTOSS, G .
BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03) :699-710
[2]  
BACKENSTOSS G, 1957, PHYS REV, V108, P416
[3]  
CARLSON RF, PRIVATE COMMUNICATIO
[4]  
CARLSON RO, 1955, PHYS REV, V100, P1975
[5]   RELATION BETWEEN SURFACE CONCENTRATION AND AVERAGE CONDUCTIVITY IN DIFFUSED LAYERS IN GERMANIUM [J].
CUTTRISS, DB .
BELL SYSTEM TECHNICAL JOURNAL, 1961, 40 (02) :509-+
[6]   A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J].
ESAKI, L ;
MIYAHARA, Y .
SOLID-STATE ELECTRONICS, 1960, 1 (01) :13-&
[7]   IMPURITY EFFECT UPON MOBILITY IN HEAVILY DOPED SILICON [J].
FURUKAWA, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (03) :577-&
[8]   COLORIMETRIC DETERMINATION OF BORON USING CARMINE [J].
HATCHER, JT ;
WILCOX, LV .
ANALYTICAL CHEMISTRY, 1950, 22 (04) :567-569
[9]   ELECTRON MOBILITIES AND TUNNELING CURRENTS IN SILICON [J].
LOGAN, RA ;
TRUMBORE, FA ;
GILBERT, JF .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) :131-&
[10]   IMPURITY COMPENSATION AND MAGNETORESISTANCE IN P-TYPE SILICON [J].
LONG, D ;
MOTCHENBACHER, CD ;
MYERS, J .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (03) :353-362