DOUBLE-DRIFT MILLIMETER-WAVE IMPATT DIODES PREPARED BY EPITAXIAL-GROWTH

被引：1

作者：

WATTS, BE ^{[1
]}

HOWARD, AM ^{[1
]}

GIBBONS, G ^{[1
]}

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTOWSHIR,ENGLAND

来源：

关键词：

D O I：

10.1049/el:19730135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：183 / 184

页数：2

共 4 条

[1] DONOR DIFFUSION DYNAMICS IN SILICON [J].

GHOSHTAGORE, RN .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :397-+

GHOSHTAGORE, RN .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :389-+

[3] 50 GHZ GALLIUM-ARSENIDE IMPATT OSCILLATOR [J].

GIBBONS, G ;

GOKGOR, HS ;

WICKENS, PR ;

PURCELL, JJ .

[4] DOUBLE-DRIFT-REGION ION-IMPLANTED MILLIMETER-WAVE IMPATT DIODES [J].

SEIDEL, TE ;

DAVIS, RE ;

IGLESIAS, DE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1222-+