DIRECT EVIDENCE FOR 2-STEP PHOTOIONIZATION OF DX(TE) CENTERS IN ALXGA1-XAS

被引：53

作者：

DOBACZEWSKI, L

KACZOR, P

机构：

[1] Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.66.68

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A detailed analysis of the photoionization process of DX(Te) centers in AlxGa(l-x)As (0.25 < x < 0.55) for different and light intensities revealed, for the first time, that the process goes through two steps. The only possible interpretation of the phenomenon is by means of a negative-U character of the defect; i. e.; the center binds two electrons in the ground state, forming a DX- energy state. An intermediate state for the process is a one-electron localized state of the defect.

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页码：68 / 71

页数：4

相关论文

共 19 条

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].

ANDERSON, PW .

PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955

[2] PHYSICAL ORIGIN OF THE DX-CENTER [J].

BOURGOIN, JC ;

MAUGER, A .

APPLIED PHYSICS LETTERS, 1988, 53 (09) :749-751

[3]

BOURGOIN JC, 1990, SOLID STATE PHENOMEN, V10

[4] DIRECT EVIDENCE OF THE DX CENTER LINK TO THE L-CONDUCTION-BAND MINIMUM IN GAALAS [J].

CALLEJA, E ;

GOMEZ, A ;

MUNOZ, E .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :383-385

[5] ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW B, 1989, 39 (14) :10063-10074

[6] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[7] ELECTRON TRAPPING BY METASTABLE EFFECTIVE-MASS STATES OF DX DONORS IN INDIRECT-BAND-GAP ALXGA1-XAS-TE [J].

DMOCHOWSKI, JE ;

DOBACZEWSKI, L ;

LANGER, JM ;

JANTSCH, W .

PHYSICAL REVIEW B, 1989, 40 (14) :9671-9682

[8]

DOBACZEWSKI L, 1988, DEFECTS CRYSTALS, P415

[9] PHOTOIONIZATION THRESHOLD OF THE DEEP DONOR IN SI-DOPED ALXGA1-XAS [J].

HENNING, JCM ;

ANSEMS, JPM .

PHYSICAL REVIEW B, 1988, 38 (08) :5772-5775

[10] DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT [J].

HJALMARSON, HP ;

DRUMMOND, TJ .

APPLIED PHYSICS LETTERS, 1986, 48 (10) :656-658