EXCITED IMPURITY STATES AND TRANSIENT PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON

被引：34

作者：

CHANG, MCP

PENCHINA, CM

MOORE, JS

机构：

来源：

PHYSICAL REVIEW B | 1971年 / 4卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.4.1229

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1229 / &

共 13 条

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PENCHINA, CM .

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[9] ELECTRICAL OSCILLATIONS IN SILICON COMPENSATED WITH DEEP LEVELS [J].

MOORE, JS ;

PENCHINA, CM ;

HOLONYAK, N ;

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JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) :2009-&

[10] ENERGY LEVELS AND NEGATIVE PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON [J].

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