GROWTH AND CHARACTERIZATION OF MOCVD-GROWN INP ON SI

被引：0
作者：
VERNON, SM
HAVEN, VE
ABERNATHY, CR
PEARTON, SJ
MACRANDER, AT
HAEGEL, VM
MAZZI, VP
SHORT, KT
ALJASSIM, MM
机构：
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 | 1989年
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：211 / 216
页数：6
相关论文
共 50 条
  • [11] EFFECTS OF GROWTH TEMPERATURE AND V/III RATIO ON MOCVD-GROWN GAAS-ON-SI
    NOZAKI, S
    NOTO, N
    EGAWA, T
    WU, AT
    SOGA, T
    JIMBO, T
    UMENO, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (01): : 138 - 144
  • [12] MAGNETOTRANSPORT STUDIES OF DELTA-DOPING LAYERS IN MOCVD-GROWN INP
    CHENG, WC
    ZRENNER, A
    YE, QY
    KOCH, F
    GRUTZMACHER, D
    BALK, P
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (01) : 16 - 19
  • [13] Characterization of MOCVD-grown non-stoichiometric SiNx
    Fang, Zhilai
    SURFACE & COATINGS TECHNOLOGY, 2008, 202 (17) : 4198 - 4203
  • [14] MOCVD-grown InGaN/GaN MQW LEDs on Si(111)
    Poschenrieder, M
    Fehse, K
    Schulz, F
    Bläsing, J
    Witte, H
    Krtschil, A
    Dadgar, A
    Diez, A
    Christen, J
    Krost, A
    INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 267 - 271
  • [15] LATERAL AND VERTICAL COMPOSITION CONTROL IN MOCVD-GROWN INP/GAINAS(P) STRUCTURES
    CURETON, CG
    THRUSH, EJ
    BRIGGS, ATR
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 549 - 554
  • [16] INVESTIGATIONS OF MOCVD-GROWN AIINAS-INP TYPE-II HETEROSTRUCTURES
    LUGAGNEDELPON, E
    VOISIN, P
    VIEREN, JP
    VOOS, M
    ANDRE, JP
    PATILLON, JN
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (04) : 524 - 528
  • [17] Structural and optical characterization of MOCVD-grown ZnO thin films
    Pagni, O
    James, GR
    Leitch, AWR
    11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS, 2004, 1 (04): : 864 - 867
  • [18] CHARACTERIZATION OF MOCVD-GROWN CDMNTE FILMS BY INFRARED-SPECTROSCOPY
    SUDHARSANAN, R
    FENG, ZC
    PERKOWITZ, S
    ROHATGI, A
    POLLARD, KT
    ERBIL, A
    JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (03) : 453 - 455
  • [19] Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire
    Mohammed, A
    Trager-Cowan, C
    Middleton, PG
    O'Donnell, KP
    Van Der Stricht, W
    Moerman, I
    Demeester, P
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, 1997, (157): : 235 - 238
  • [20] MOCVD GROWTH AND CHARACTERIZATION OF GAAS AND GAP GROWN ON SI SUBSTRATES
    SOGA, T
    KOHAMA, Y
    UCHIDA, K
    TAJIMA, M
    JIMBO, T
    UMENO, M
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 499 - 503
12345