GROWTH AND CHARACTERIZATION OF MOCVD-GROWN INP ON SI

被引：0
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作者：
VERNON, SM
HAVEN, VE
ABERNATHY, CR
PEARTON, SJ
MACRANDER, AT
HAEGEL, VM
MAZZI, VP
SHORT, KT
ALJASSIM, MM
机构：
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 | 1989年
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D O I：
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中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
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页码：211 / 216
页数：6
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