EPITAXIAL-BASE TRANSISTORS WITH ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION (UHV/CVD) EPITAXY - ENHANCED PROFILE CONTROL FOR GREATER FLEXIBILITY IN DEVICE DESIGN

被引：33
作者：
HARAME, DL
STORK, JMC
MEYERSON, BS
NGUYEN, TN
SCILLA, GJ
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 04期
关键词：
D O I：
10.1109/55.31702
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：156 / 158
页数：3
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