LOW-TEMPERATURE PHOTOLUMINESCENCE STUDIES OF CHEMICAL-VAPOR-DEPOSITION-GROWN 3C-SIC ON SI

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 2052 - 2056

[3] CARTER CH, 1985, MATER RES SOC S P, V46, P593

[4] Choyke W. J., 1977, International Conference on Radiation Effects in Semiconductors, P58

[5] PHOTOLUMINESCENCE OF RADIATION DEFECTS IN CUBIC SIC - LOCALIZED MODES AND JAHN-TELLER EFFECT [J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1843 - &

[6] OPTICAL PROPERTIES OF CUBIC SIC - LUMINESCENCE OF NITROGEN-EXCITON COMPLEXES + INTERBAND ABSORPTION [J]. PHYSICAL REVIEW, 1964, 133 (4A): : 1163 - +

[7] LOCATION AND SHAPE OF CONDUCTION-BAND MINIMA IN CUBIC SILICON-CARBIDE [J]. JOURNAL OF LUMINESCENCE, 1977, 15 (03) : 299 - 314

[8] RAMAN-SCATTERING STUDIES OF CHEMICAL-VAPOR-DEPOSITED CUBIC SIC FILMS OF (100) SI [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 3176 - 3186

[9] A PHOTOLUMINESCENCE STUDY OF MOLECULAR-BEAM EPITAXY GROWN CDTE-FILMS ON (001) INSB SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 24 - 25

[10] LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF (001) CDTE-FILMS GROWN BY MOLECULAR-BEAM EPITAXY AT DIFFERENT SUBSTRATE TEMPERATURES [J]. JOURNAL OF LUMINESCENCE, 1986, 35 (06) : 329 - 341

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 2052 - 2056

[3] CARTER CH, 1985, MATER RES SOC S P, V46, P593

[4] Choyke W. J., 1977, International Conference on Radiation Effects in Semiconductors, P58

[5] PHOTOLUMINESCENCE OF RADIATION DEFECTS IN CUBIC SIC - LOCALIZED MODES AND JAHN-TELLER EFFECT [J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1843 - &

[6] OPTICAL PROPERTIES OF CUBIC SIC - LUMINESCENCE OF NITROGEN-EXCITON COMPLEXES + INTERBAND ABSORPTION [J]. PHYSICAL REVIEW, 1964, 133 (4A): : 1163 - +

[7] LOCATION AND SHAPE OF CONDUCTION-BAND MINIMA IN CUBIC SILICON-CARBIDE [J]. JOURNAL OF LUMINESCENCE, 1977, 15 (03) : 299 - 314

[8] RAMAN-SCATTERING STUDIES OF CHEMICAL-VAPOR-DEPOSITED CUBIC SIC FILMS OF (100) SI [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 3176 - 3186

[9] A PHOTOLUMINESCENCE STUDY OF MOLECULAR-BEAM EPITAXY GROWN CDTE-FILMS ON (001) INSB SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 24 - 25

[10] LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF (001) CDTE-FILMS GROWN BY MOLECULAR-BEAM EPITAXY AT DIFFERENT SUBSTRATE TEMPERATURES [J]. JOURNAL OF LUMINESCENCE, 1986, 35 (06) : 329 - 341