NONEQUILIBRIUM BEHAVIOR OF CHARGED POINT-DEFECTS DURING PHOSPHORUS DIFFUSION IN SILICON

被引：24

作者：

RICHARDSON, WB

MULVANEY, BJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2243 / 2247

页数：5

相关论文

共 24 条

[1] INTERSTITIAL DEFECT REACTIONS IN SILICON
ASOM, MT
BENTON, JL
SAUER, R
KIMERLING, LC
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (04) : 256 - 258
[2] EXPERIMENTS IN NUMERICAL-METHODS FOR A PROBLEM IN COMBUSTION MODELING
BYRNE, GD
HINDMARSH, AC
[J]. APPLIED NUMERICAL MATHEMATICS, 1985, 1 (01) : 29 - 57
[3] VACANCY-DIFFUSION MODEL FOR QUENCHED-IN E-CENTERS IN CW-LASER ANNEALED VIRGIN SILICON
CHANTRE, A
KECHOUANE, M
BOIS, D
[J]. PHYSICA B & C, 1983, 116 (1-3): : 547 - 552
[4] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT
FAIR, RB
TSAI, JCC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) : 1107 - 1118
[5] THE MOVING FINITE-ELEMENT METHOD - APPLICATIONS TO GENERAL PARTIAL-DIFFERENTIAL EQUATIONS WITH MULTIPLE LARGE GRADIENTS
GELINAS, RJ
DOSS, SK
MILLER, K
[J]. JOURNAL OF COMPUTATIONAL PHYSICS, 1981, 40 (01) : 202 - 249
[6] DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE
GREINER, ME
GIBBONS, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5181 - 5191
[7] HU SM, 1983, J APPL PHYS, V54, P691
[8] SIMULATION OF CRITICAL IC FABRICATION PROCESSES USING ADVANCED PHYSICAL AND NUMERICAL-METHODS
JUNGLING, W
PICHLER, P
SELBERHERR, S
GUERRERO, E
POTZL, HW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 156 - 167
[9] DIFFUSION AND INTERDIFFUSION IN ZN-DISORDERED ALAS-GAAS SUPER-LATTICES
LEE, JW
LAIDIG, WD
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) : 147 - 165
[10] THEORETICAL-MODEL FOR RADIATION ENHANCED DIFFUSION AND REDISTRIBUTION OF IMPURITIES - COMPARISON WITH EXPERIMENTS
LOUALICHE, S
LUCAS, C
BARUCH, P
GAILLIARD, JP
PFISTER, JC
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 69 (02): : 663 - 676