CHANGE OF GALLIUM-ARSENIDE COMPOSITION IN THE VICINITY OF SURFACE UNDER AR+-ION BOMBARDMENT

被引：0

作者：

BERT, NA

KONNIKOV, SG

KOROLKOV, AV

POGREBITSKII, KY

机构：

来源：

PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 1988年 / 14卷 / 08期

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中图分类号：

O59 [应用物理学];

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摘要：

引用

页码：673 / 676

页数：4

共 7 条

[1] AMUSYA VM, 1987, POLUPROVODNIKI GETER, P5
[2] BAKALEINIKOV LA, 1986, VSESOYUZ K FIZICHESK, P26
[3] LIAN ZL, 1978, J APPL PHYS, V49, P5295
[4] EFFECTS OF ION SPUTTERING ON SEMICONDUCTOR SURFACES
MCGUIRE, GE
[J]. SURFACE SCIENCE, 1978, 76 (01) : 130 - 147
[5] COMPOSITION CHANGES IN GAAS DUE TO LOW-ENERGY ION-BOMBARDMENT
SINGER, IL
MURDAY, JS
COOPER, LR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 725 - 725
[6] APPLICATION OF AES TO STUDY OF SELECTIVE SPUTTERING OF THIN-FILMS
VANOOSTROM, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 224 - 227
[7] LOW-ENERGY AR ION-BOMBARDMENT DAMAGE OF SI, GAAS, AND INP SURFACES
WILLIAMS, RS
[J]. SOLID STATE COMMUNICATIONS, 1982, 41 (02) : 153 - 156