CHANNELLING OF IONS THROUGH SILICON DETECTORS

被引：58

作者：

DEARNALEY, G

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1964年 / NS11卷 / 03期

关键词：

D O I：

10.1109/TNS.1964.4323430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：249 / +

页数：1

共 8 条

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[2]

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[6] EXPERIMENTAL EVIDENCE FOR INCREASE OF HEAVY ION RANGES BY CHANNELING IN CRYSTALLINE STRUCTURE [J].

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[7]

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[8] COMPUTER STUDIES OF SLOWING DOWN OF ENERGETIC ATOMS IN CRYSTALS [J].

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