HIGH-POWER ERBIUM-DOPED FIBER LASER MODE-LOCKED BY A SEMICONDUCTOR SATURABLE ABSORBER

被引：50
|
作者：
BARNETT, BC
RAHMAN, L
ISLAM, MN
CHEN, YC
BHATTACHARYA, P
RIHA, W
REDDY, KV
HOWE, AT
STAIR, KA
IWAMURA, H
FRIBERG, SR
MUKAI, T
机构：
[1] ALC TELECOM, NAPERVILLE, IL 60566 USA
[2] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN
[3] NIPPON TELEGRAPH & TEL PUBL CORP, BASIC RES LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源：
OPTICS LETTERS | 1995年 / 20卷 / 05期
关键词：
D O I：
10.1364/OL.20.000471
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Using an erbium-doped fiber laser (EDFL) passively mode lacked by a semiconductor saturable absorber, we generate 5.5-ps pulses of a 2.3-nJ/pulse, which are more than three times higher in energy than for other reported EDFL's. We show that, by introduction of a Linear loss element within the cavity, multiple pulsing behavior at high pump powers can be suppressed. We also determine the saturable-absorber characteristics-absorbance versus wavelength near band gap-that are necessary to produce short mode-locked pulses.
引用
收藏
页码：471 / 473
页数：3
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