A DEFECT MODEL FOR UNDOPED AND TELLURIUM DOPED GALLIUM-ARSENIDE

被引：17

作者：

FEWSTER, PF

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(81)90013-5

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：883 / 889

页数：7

共 23 条

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