LOW-TEMPERATURE FORMATION OF POLYCRYSTALLINE SILICON FILMS BY MOLECULAR-BEAM DEPOSITION

被引:33
作者
MATSUI, M
SHIRAKI, Y
MARUYAMA, E
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D O I
10.1063/1.330580
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O59 [应用物理学];
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页码:995 / 998
页数:4
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共 7 条
[1]   SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].
CSEPREGI, L ;
KENNEDY, EF ;
MAYER, JW ;
SIGMON, TW .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911
[2]  
ITOH T, COMMUNICATION
[3]   STRUCTURE AND PROPERTIES OF LPCVD SILICON FILMS [J].
KAMINS, TI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :686-690
[4]   STRUCTURE OF CHEMICALLY DEPOSITED POLYCRYSTALLINE-SILICON FILMS [J].
KAMINS, TI ;
CASS, TR .
THIN SOLID FILMS, 1973, 16 (02) :147-165
[5]   POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS ON GLASS [J].
MATSUI, M ;
SHIRAKI, Y ;
KATAYAMA, Y ;
KOBAYASHI, KLI ;
SHINTANI, A ;
MARUYAMA, E .
APPLIED PHYSICS LETTERS, 1980, 37 (10) :936-937
[6]   STRUCTURES OF SI FILMS CHEMICALLY VAPOR-DEPOSITED ON AMORPHOUS SIO2 SUBSTRATES [J].
NAGASIMA, N ;
KUBOTA, N .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (08) :1105-1112
[7]   MOLECULAR-BEAM AND SOLID-PHASE EPITAXIES OF SILICON UNDER ULTRAHIGH-VACUUM [J].
SHIRAKI, Y ;
KATAYAMA, Y ;
KOBAYASHI, KLI ;
KOMATSUBARA, KF .
JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :287-291