DISTRIBUTIONS OF GROWTH-RATES ON PATTERNED SURFACES MEASURED BY SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

被引:150
作者
HATA, M
ISU, T
WATANABE, A
KATAYAMA, Y
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期
关键词
D O I
10.1116/1.584997
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:692 / 696
页数:5
相关论文
共 9 条
[1]   REAL-TIME OBSERVATION OF GAAS (001) SURFACES DURING MOLECULAR-BEAM EPITAXY BY SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].
ISU, T ;
WATANABE, A ;
HATA, M ;
KATAYAMA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2259-L2261
[2]   ANISOTROPIC LATERAL GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY [J].
KAWABE, M ;
SUGAYA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (07) :L1077-L1079
[3]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J].
NEAVE, JH ;
DOBSON, PJ ;
JOYCE, BA ;
ZHANG, J .
APPLIED PHYSICS LETTERS, 1985, 47 (02) :100-102
[4]   DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].
NEAVE, JH ;
JOYCE, BA ;
DOBSON, PJ ;
NORTON, N .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8
[5]  
NILSSON S, 1989, APPL PHYS LETT, V55, P92
[6]   ANISOTROPIC SURFACE MIGRATION OF GA ATOMS ON GAAS(001) [J].
OHTA, K ;
KOJIMA, T ;
NAKAGAWA, T .
JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :71-74
[7]   GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION [J].
TSANG, WT ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1977, 30 (06) :293-296
[8]   SPONTANEOUS GROWTH OF COHERENT TILTED SUPERLATTICE ON VICINAL (100) GAAS SUBSTRATES [J].
TSUCHIYA, M ;
PETROFF, PM ;
COLDREN, LA .
APPLIED PHYSICS LETTERS, 1989, 54 (17) :1690-1692
[9]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENT OF SURFACE-DIFFUSION DURING THE GROWTH OF GALLIUM-ARSENIDE BY MBE [J].
VANHOVE, JM ;
COHEN, PI .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :13-18