LOW-TEMPERATURE OXIDATION OF CRYSTALLINE SILICON USING EXCIMER LASER IRRADIATION

被引：16

作者：

NAYAR, V ^{[1
]}

BOYD, IW ^{[1
]}

GOODALL, FN ^{[1
]}

ARTHUR, G ^{[1
]}

机构：

[1] RUTHERFORD APPLETON LAB,DIDCOT OX11 0QX,OXON,ENGLAND

来源：

APPLIED SURFACE SCIENCE | 1989年 / 36卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90906-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：134 / 140

页数：7

共 11 条

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[2]

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[5]

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[7] NEW RESULTS ON LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON [J].

IRENE, EA .

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[8] HEAT-FLOW CALCULATION OF PULSED EXCIMER ULTRAVIOLET-LASERS MELTING OF AMORPHOUS AND CRYSTALLINE SILICON SURFACES [J].

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[10] THIN THERMAL OXIDE ON SILICON [J].

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