LOW-THRESHOLD ALX GA1-X AS VISIBLE AND IR-LIGHT-EMITTING DIODE LASERS

被引：25

作者：

KRESSEL, H

LOCKWOOD, HF

NELSON, H

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1970年 / QE 6卷 / 06期

关键词：

D O I：

10.1109/JQE.1970.1076488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：278 / &

共 20 条

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[7]

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[9] CATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS [J].

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[10] STIMULATED EMISSION AT 300 DEGREES K AND SIMULTANEOUS LASING AT 2 WAVELENGTHS IN EPITAXIAL ALXGA1-XAS INJECTION LASERS [J].

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