THRESHOLD ENERGY OF IMPACT IONIZATION BY ELECTRONS AND HOLES IN GERMANIUM

被引：0

作者：

SHARMA, SK

SOGANI, H

YADAV, KS

SHEKHAR, C

机构：

来源：

INDIAN JOURNAL OF PHYSICS AND PROCEEDINGS OF THE INDIAN ASSOCIATION FOR THE CULTIVATION OF SCIENCE-PART A | 1978年 / 52卷 / 04期

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暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：359 / 362

页数：4

共 15 条

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[2] IMPACT IONIZATION THRESHOLDS IN SEMICONDUCTORS
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[3] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
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[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &
[4] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS
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LEE, CA
LOGAN, RA
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AIGRAIN, P
[J]. PHYSICAL REVIEW, 1960, 118 (02): : 425 - 434
[5] FRANZ W, 1956, HANDB PHYSIK, V17, P190
[6] THRESHOLD ENERGY FOR AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
HAUSER, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 507 - &
[7] IVANKHNO VN, 1972, SOV PHYS-SOLID STATE, V14, P157
[8] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM
MCKAY, KG
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[J]. PHYSICAL REVIEW, 1953, 91 (05): : 1079 - 1084
[9] AVALANCHE BREAKDOWN IN GERMANIUM
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[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241
[10] THRESHOLD ENERGY FOR IMPACT IONIZATION BY ELECTRONS IN GAAS CONSIDERING NONPARABOLICITY OF CENTRAL VALLEY
SHEKHAR, C
SHARMA, SK
[J]. PHYSICS LETTERS A, 1975, A 51 (06) : 339 - 340