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- [1] PHOTOELECTRIC DETERMINATION OF THE FERMI LEVEL AT AMORPHOUS ARSENIC SURFACES PHYSICAL REVIEW, 1949, 75 (08): : 1181 - 1182
- [2] DETERMINATION OF THE FERMI-LEVEL PINNING POSITION AT SI(111) SURFACES PHYSICAL REVIEW B, 1983, 28 (12): : 7014 - 7018
- [4] SOME PHOTOELECTRIC EFFECT FEATURES IN AMORPHOUS LAYERS OF ARSENIC TRISELENIDE DOKLADY AKADEMII NAUK SSSR, 1959, 129 (04): : 789 - 792
- [6] PHOTOELECTRIC PROPERTIES OF AMORPHOUS HYDROGENATED SILICON IMPLANTED WITH GALLIUM AND ARSENIC SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (04): : 422 - 425
- [9] FERMI LEVEL POSITION IN DOPED AMORPHOUS SILICON JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (05): : L209 - L213
- [10] EFFECT OF INTERACTIONS ON DETERMINATION OF FERMI SURFACES PHYSICAL REVIEW, 1961, 122 (06): : 1773 - &