INVESTIGATION OF MOBILE IONS IN MOS STRUCTURES USING TSIC METHOD

被引：21

作者：

NAUTA, PK

HILLEN, MW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 05期

关键词：

D O I：

10.1063/1.325168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2862 / 2865

页数：4

相关论文

共 6 条

[1] MOBILE IONS IN SIO2 - POTASSIUM [J].

DERBENWICK, GF .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1127-1130

[2] THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN THERMAL SIO2 [J].

HICKMOTT, TW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2583-2598

[3] USE OF THERMALLY STIMULATED IONIC CURRENTS WITH A HYPERBOLIC HEATING RATE TO MEASURE SODIUM MOTION IN RF-SPUTTERED SIO2 FILMS [J].

HICKMOTT, TW .

APPLIED PHYSICS LETTERS, 1973, 22 (06) :267-269

[4] EFFECT OF BOMBARDMENT BY GLASS-FORMING IONS ON THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN SIO2 [J].

HICKMOTT, TW .

PHYSICAL REVIEW LETTERS, 1974, 32 (02) :65-67

[5] DIRECT MEASUREMENT OF NA+ ION MOBILITY IN SIO2-FILMS [J].

KRIEGLER, RJ ;

DEVENYI, TF .

THIN SOLID FILMS, 1976, 36 (02) :435-439

[6] TRANSFER OF MOBILE IONS FROM AQUEOUS-SOLUTIONS TO SILICON DIOXIDE SURFACE [J].

RAIDER, SI ;

GREGOR, LV ;

FLITSCH, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) :425-431