HOT-ELECTRON EFFECTS IN SILICON-ON-INSULATOR N-CHANNEL MOSFET

被引：56

作者：

COLINGE, JP

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1987.23213

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2173 / 2177

页数：5

共 8 条

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COLINGE, JP ;

HASHIMOTO, K ;

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LIU, ED ;

PENG, SS ;

RISSMAN, P .

[4]

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[5]

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[6]

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[7]

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[8]

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